Low-temperature electron radiation damage in scandium

Electron irradiation of hcp scandium at T ⪅ 12 K allowed to determine the energy threshold for Frenkel-pair creation, T d = 13.8 ± 0.5 eV, and the defect resistivity, ϱ F ≈ 5 × 10 −3 Ω cm/F.P . The annealing spectrum exhibits four substages between 20 and 70 K, a broad substage centered at 105 K att...

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Bibliographic Details
Published in:Physics letters. A 1985-01, Vol.107 (3), p.142-144
Main Authors: Daou, J.N., Vajda, P., Lucasson, A., Lucasson, P., Burger, J.P.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Electrons and positron radiation effects
Exact sciences and technology
Materials science
Metals, semimetals and alloys
Phase diagrams and microstructures developed by solidification and solid-solid phase transformations
Physical radiation effects, radiation damage
Physics
Specific materials
Structure of solids and liquids
crystallography
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Summary:Electron irradiation of hcp scandium at T ⪅ 12 K allowed to determine the energy threshold for Frenkel-pair creation, T d = 13.8 ± 0.5 eV, and the defect resistivity, ϱ F ≈ 5 × 10 −3 Ω cm/F.P . The annealing spectrum exhibits four substages between 20 and 70 K, a broad substage centered at 105 K attributed to interstitial long-range migration, and a stage III between 240 and 300 K.
ISSN:0375-9601
1873-2429
DOI:10.1016/0375-9601(85)90733-9