Catalytic synthesis of straight silicon nanowires over Fe containing silica gel substrates by chemical vapor deposition

• Published in: Journal of crystal growth 2001-04, Vol.224 (3), p.230-234
• Main Authors: Liu, Z.Q, Xie, S.S, Zhou, W.Y, Sun, L.F, Li, Y.B, Tang, D.S, Zou, X.P, Wang, C.Y, Wang, G
• Format: Article
• Language: English
• Subjects: A1. Low dimensional structures; A3. Chemical vapor deposition processes; B1. Nanomaterials; B2. Semiconducting silicon; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Disordered solids; Exact sciences and technology; Materials science; Nanoscale materials and structures: fabrication and characterization; Physics; Powders, porous materials; Structure of solids and liquids; crystallography
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(01)01022-3

We report a new method to synthesize very straight silicon nanowires using a porous iron/SiO 2 gel as a template by thermal chemical vapor deposition at a temperature of about 500°C. Scanning electron microscopy, transmission electron microscopy and Raman scattering spectroscopy were used to characterize the samples. The results show that a large amount of straight Si nanowires with diameters of about 30 nm and lengths of about 1 μm was obtained. High-resolution transmission electron microscopy observation shows that microtwin defects lie in the straight silicon nanowires. Raman scattering from the nanowires shows a larger line width (about 15 cm −1) and a down-shifted (about 9 cm −1) peak as compared to that of bulk crystalline silicon.