Eddy current sensor concepts for the Bridgman growth of semiconductors

• Published in: Journal of crystal growth 1997-03, Vol.172 (3), p.303-312
• Main Authors: Dharmasena, Kumar P., Wadley, Haydn N.G.
• Format: Article
• Language: English
• Subjects: Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Growth from melts; zone melting and refining; Materials science; Methods of crystal growth; physics of crystal growth; Physics
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00495-2

Electromagnetic finite element methods have been used to identify eddy current sensor designs for monitoring CdTe vertical Bridgman crystal growth. A model system consisting of pairs of silicon cylinders with electrical conductivities similar to those of solid and liquid CdTe has been used to evaluate the multifrequency response of several sensors designed for locating and characterizing the curvature of liquid-solid interfaces during vertical Bridgman growth. At intermediate frequencies (100–800 kHz), the sensor's imaginary impedance monotonically increases as interfacial curvature changes from concave to convex or the interface location moves upwards through the sensor. The experimental data are in excellent agreement with theoretical predictions. At higher test frequencies (∼ 5 MHz), the test circuit's parasitics contribute to the sensor's response. Even so, the predicted trends with interface location/curvature were found to be still preserved, and the experiments confirm that the sensor's high frequency response depends more on interface location and has only a small sensitivity to curvature. Multifrequency data obtained from these types of sensors have the potential to separately discriminate the location and the shape of liquid-solid interfaces during the vertical Bridgman growth of CdTe and other semiconductor materials of higher electrical conductivity.