Full gaseous source growth of separate confinement MQW 1.55 μm laser structures in a production MOMBE

• Published in: Journal of crystal growth 1997-05, Vol.175, p.1247-1253
• Main Authors: Popp, M., Heinecke, H., Baumeister, H., Veuhoff, E.
• Format: Article
• Language: English
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(96)00945-1

The feasibility of metalorganic molecular beam epitaxy (MOMBE or CBE) as a production process is studied with respect to flexibility, uniformity, long term stability and device quality. Gaseous doping sources were used for growth of GaInAsP InP device structures: For n and p type doping disilane and diethylzinc (DEZn), respectively, were injected. The importance of precracking for efficient dopant incorporation is described. For uniform growth across larger areas the dependence of layer composition on growth temperature is critical. Therefore this effect along with the effect of V III ratio have been studied in detail, and the optimum growth conditions are discussed. It is demonstrated that composition uniformity and long term stability can be obtained leading to variations of emission wavelength and lattice mismatch below ± 1.5 nm and ±1.5 × 10 −4, respectively. These material properties are found across an area of about 90% of a 2 in wafer revealing the high yield of this process. As a device test vehicle, strained layer MQW laser structures were grown, and data on broad area threshold current densities are compared with state of the art results from structures grown by metalorganic vapour phase epitaxy (MOVPE).