Thermal modeling of localized laser heating in multi-level interconnects

• Published in: Microelectronics and reliability 2003-02, Vol.43 (2), p.297-305
• Main Author: Tangyunyong, Paiboon
• Format: Article
• Language: English
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/S0026-2714(02)00322-0

Thermal modeling was used to simulate thermal profiles from localized laser heating on two multi-level interconnect structures with metallization complexity comparable to those used in advanced interconnect systems. The modeling focused on addressing issues with regard to the effectiveness of laser-based techniques in defect localization in state-of-the-art metallization schemes. Modeling results indicate that indirect heating from the laser does not propagate effectively through adjacent metal layers from both the front side and the back side. Poor heat conduction and its associated thermal spreading during laser heating make defect detection difficult beyond three levels of metal. Thermal distribution and spreading were found to be more affected by interconnect geometries than by variations in laser spot size. Smaller temperature rises during laser heating were observed in the newer interconnect structures consisting of copper and low- k dielectric materials than in those with conventional aluminum, tungsten, and silicon dioxide. The smaller temperature rise leads to weaker signal strength at the defect sites and makes it more difficult to detect defects in the newer-material structures. Metallization density also affects heat conduction in advanced interconnect systems but the temperature rise during laser heating varies slowly as a function of metallization density.