Electrodeposition of copper-indium alloy under diffusion-limiting current control

• Published in: Thin solid films 1996-11, Vol.288 (1), p.90-94
• Main Authors: Prosini, P.P., Addonizio, M.L., Antonaia, A., Loreti, S.
• Format: Article
• Language: English
• Subjects: Copper; Deposition process; Electrochemistry; Indium
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(96)08817-7

The aim of this work was to study a method of electrodeposition of stoichiometric copper-indium alloy to be used as a precursor for obtaining CuInSe 2 by selenization. This compound represents one of the most promising materials in terms of low cost and high efficiency for the realization of large-area thin film solar cells for terrestrial applications. However, to avoid the growth of secondary phases such as CuSe and In 2Se 3, the stoichiometry and morphology of the alloy have to be carefully controlled. We investigated the relationship between the ratio of Cu 2+ to In 3+ in the solution and the metal ratio in the deposited film. In order to avoid the use of complexing agents we chose to control the stoichiometry of the copper-indium alloys, electrodepositing them under diffusion-limiting current. Since the diffusion currents are, as a first approximation, proportional to the concentrations, there is a simple relationship between the individual diffusion currents of the ions and the stoichiometry of the deposited alloy. Thus we can change the CuIn content in the deposited film by controlling the ratio between the ions in the deposition bath.