A survey of ohmic contacts to III-V compound semiconductors

• Published in: Thin solid films 1997-10, Vol.308, p.599-606
• Main Authors: Baca, A.G, Ren, F, Zolper, J.C, Briggs, R.D, Pearton, S.J
• Format: Article
• Language: English
• Subjects: Alloys; Contact materials; Properties; Semiconductors
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/S0040-6090(97)00439-2

A survey of ohmic contact materials and properties to GaAs, InP, GaN will be presented along with critical issues pertaining to each semiconductor material. Au-based alloys (e.g. Ni/AuGe for n-type GaAs) are the most commonly used contacts for GaAs and InP materials for both n- and p-type contacts due to the excellent contact resistivity, reliability, and usefulness over a wide range of doping levels. Research into new contacting schemes for these materials has focused on addressing limitations of the conventional Au-alloys in thermal stability, propensity for spiking, poor edge definition, and new approaches for a non-alloyed contact. The alternative contacts to GaAs and InP include alloys with higher temperature stability, contacts based on solid phase regrowth, and contacts that react with the substrate to form lower bandgap semiconductors alloys at the interface. A new area of contact studies is for the wide bandgap group III-nitride materials. At present, a low resistivity ohmic contact to p-type GaN has not been obtained, primarily due to the large acceptor ionization energy and the resultant difficulty in achieving high free hole concentrations at room temperature. For n-type GaN, however, significant progress has been reported with reactive Ti-based metalization schemes or the use of graded InGaN layers. The present status of these approaches will be reviewed.