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Nanofriction of silicon oxide surfaces covered with thin water films
A thin water film present on surfaces plays a central role in defining the micro- and nanotribological properties of a system. This paper presents a quantitative examination of the nanotribological effects of thin water films in ultra high vacuum (UHV) on OH-terminated (hydrophilic) and bare (no OH...
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Published in: | Wear 2003-05, Vol.254 (9), p.924-929 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A thin water film present on surfaces plays a central role in defining the micro- and nanotribological properties of a system. This paper presents a quantitative examination of the nanotribological effects of thin water films in ultra high vacuum (UHV) on OH-terminated (hydrophilic) and bare (no OH terminations, hydrophobic in vacuum) silicon oxide surfaces. Water film thickness was controlled by varying the water partial pressure in UHV. Friction was measured by scanning force microscopy (SFM) as a function of an external applied load. The surface energy and the shear stress of the nanotribological contact was then approximated by fitting the friction-load curves using the Derjaguin–Muller–Toporov (DMT) model. The surface energy as well as the adhesion force of the OH-terminated hydrophilic sample first decrease and later increase significantly at higher water partial pressures. No such dependence could be deduced from the friction-load curves at varying water pressures for the bare hydrophobic silicon oxide surface. However, at relatively high normal loads (pressures) and water partial pressures the bare hydrophobic silicon oxide is transformed to an OH-terminated surface. This transformation appears to occur only in the area of contact leading to the conclusion that it is friction-induced. This work shows that the chemical composition of the topmost surface layer defines the frictional behavior of the tribosystem. |
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ISSN: | 0043-1648 1873-2577 |
DOI: | 10.1016/S0043-1648(03)00248-5 |