Low energy electron-excited nano-luminescence spectroscopy of GaN surfaces and interfaces

We have used low energy electron-excited nano-luminescence (LEEN) spectroscopy to obtain electronic band gap, confined state, and deep level trap information from GaN surfaces and buried interfaces on a nanometer scale. This local spectroscopy provides information available only indirectly by other...

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Bibliographic Details
Published in:Applied surface science 2001-05, Vol.175-176, p.442-449
Main Authors: Brillson, L.J, Young, A.P, Jessen, G.H, Levin, T.M, Bradley, S.T, Goss, S.H, Bae, J, Ponce, F.A, Murphy, M.J, Schaff, W.J, Eastman, L.F
Format: Article
Language:English
Subjects:
Defects
GaN
Heterojunctions
Luminescence spectroscopy
Semiconductor interfaces
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Summary:We have used low energy electron-excited nano-luminescence (LEEN) spectroscopy to obtain electronic band gap, confined state, and deep level trap information from GaN surfaces and buried interfaces on a nanometer scale. This local spectroscopy provides information available only indirectly by other electronic techniques. Using LEEN in combination with other surface science methods, we have probed the localized electronic states at GaN free surfaces, metal–GaN contacts, GaN/InGaN quantum wells, AlGaN/GaN pseudomorphic heterostructures, and GaN/sapphire template layers. Their properties are sensitive to the interface chemical composition, bonding, and atomic structure and in turn to the specifics of the epitaxial growth. The results highlight new methods for understanding and controlling electronic properties of GaN interfaces and their future applications.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(01)00098-8