Two-dimensional dopant profiling by scanning capacitance force microscopy

We developed scanning capacitance force microscopy (SCFM) capable of mapping local differential capacitance (∂ C/∂ V), based on atomic force microscopy (AFM), by detecting an electrostatic force (ESF) between a tip and a sample. While an electric field alternating at an angular frequency ( ω) is app...

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Bibliographic Details
Published in:Applied surface science 2003-03, Vol.210 (1), p.93-98
Main Authors: Kimura, K., Kobayashi, K., Yamada, H., Matsushige, K.
Format: Article
Language:English
Subjects:
Angular frequency
Frequency modulation
Lock-in amplifier
Scanning capacitance force microscopy
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Summary:We developed scanning capacitance force microscopy (SCFM) capable of mapping local differential capacitance (∂ C/∂ V), based on atomic force microscopy (AFM), by detecting an electrostatic force (ESF) between a tip and a sample. While an electric field alternating at an angular frequency ( ω) is applied between the tip and the sample, an induced ESF oscillating at its third harmonic frequency (3 ω), which contain information on ∂ C/∂ V is detected using a lock-in amplifier (LIA). In this paper, we showed some dynamic-mode SCFM results obtained on a Si test sample. Clear dopant contrasts were obtained by dynamic-mode SCFM operated in air. An apparent position of the p–n junction was moved when an applied d.c. bias voltage was changed. A dynamic-mode SCFM image obtained in a vacuum condition utilizing frequency modulation (FM) detection method also showed clear dopant contrast.
ISSN:0169-4332
1873-5584
DOI:10.1016/S0169-4332(02)01486-1