Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(1 0 0) Schottky contacts

• Published in: Applied surface science 2003-07, Vol.217 (1), p.250-260
• Main Authors: Karataş, Ş, Altındal, Ş, Türüt, A, Özmen, A
• Format: Article
• Language: English
• Subjects: Activation energy; Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron and ion emission by liquids and solids; impact phenomena; Electronics; Exact sciences and technology; Gaussian distribution; Interfaces; Physics; Schottky contacts; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Surface barrier, boundary, and point contact devices; Thermionic emission
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(03)00564-6

The current–voltage ( I– V) characteristics of Sn/hydrogen-terminated p-type Si Schottky contacts have been measured in the temperature range of 150–400 K. It is shown that the occurrence of a Gaussian distribution of then BHs is responsible for the decrease of the apparent BH Φ b0, increase of the ideality factor n and non-linearity in the activation energy plot at low temperatures. A Φ b0 versus 1/ T plot was drawn to obtain evidence of a Gaussian distribution of the BHs, and values of Φ ̄ b0 =1.049 eV and σ 0=0.114 V for the mean BH and zero-bias standard deviation have been obtained from this plot, respectively. Then, a modified ln( I 0/ T 2)− q 2 σ 0 2/2 k 2 T 2 versus 1/ T plot gives Φ ̄ b0 and A ∗ as 1.026 eV and 14.60 A cm −2 K −2, respectively. It has been concluded that the temperature dependent I– V characteristics of the device can be successfully explained on the basis of a thermionic emission mechanism with Gaussian distribution of the BHs. Furthermore, an average value of −0.247 meV K −1 for the temperature coefficient has been obtained; the value of −0.247 meV K −1 for hydrogen-terminated p-type Si differs from those in the literature due to the termination with hydrogen of the p-Si surface.