STM study of the Te/Si(100) interface

• Published in: Applied surface science 1999-04, Vol.142 (1), p.475-480
• Main Authors: Wiame, F, Mathot, G, Sivananthan, S, Rujirawat, S, Caudano, R, Sporken, R
• Format: Article
• Language: English
• Subjects: Auger electron spectroscopy; Cadmium telluride; Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Interface structure and roughness; Physics; Scanning tunnelling microscopy; Silicon; Solid surfaces and solid-solid interfaces; Surface reconstruction; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Tellurium
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/S0169-4332(98)00686-2

The structure of Te/Si(100)-(2×1) has been studied by scanning tunnelling microscopy (STM). The samples were prepared as follows: first, Te was deposited at elevated temperature, then a CdTe ( 1 1 1) B film was grown by molecular beam epitaxy. The structural quality of the CdTe film was checked by double-crystal X-ray diffraction. Finally, the CdTe film was desorbed at 500°C in ultra-high vacuum. Auger electron spectroscopy confirms previous photoelectron spectroscopy data showing that this procedure results in a Te coverage of about one monolayer. In addition to the well-known (2×1) reconstruction of the Te/Si(100) surface, STM reveals areas of a (3×1)-like reconstruction which are probably related to defects on the Si surface. We propose a model in which the STM images from both these reconstructions can be explained in terms of buckled or non-buckled Te dimers.