Photochemical conversion of electrically conductive polysilane films into insulators

Electrically conductive polysilane films doped with iodine can be converted into insulators to semiconductors by a photooxidation reaction. The conductivity can be controlled in the range 10−15–10−4 S cm−1 by regulation of the extent of the photooxidation reaction. Since the non-irradiated area of t...

Full description

Saved in:
Bibliographic Details
Published in:Synthetic metals 1996-09, Vol.82 (3), p.201-205
Main Authors: Kabeta, Keiji, Wakamatsu, Shigeru, Sugi, Shin-ichiro, Imai, Takafumi
Format: Article
Language:English
Subjects:
Applied sciences
Conducting pattern
Electrical conductivity
Exact sciences and technology
Grafting and modifications
Photochemical conversion
Photooxidation
Physicochemistry of polymers
Polymers and radiations
Polysilane
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Electrically conductive polysilane films doped with iodine can be converted into insulators to semiconductors by a photooxidation reaction. The conductivity can be controlled in the range 10−15–10−4 S cm−1 by regulation of the extent of the photooxidation reaction. Since the non-irradiated area of the film keeps its doping susceptibility, it is possible to prepare a conducting pattern on the film by a photolithographic technique. Network polysilanes containing various substituents, prepared by the disproportionation reaction of alkoxydisilanes, were primarily examined, in addition to polysilanes prepared by the Wurtz coupling reaction. UV and IR analyses indicated that the Si-Si bonds in the polysilanes were changed into Si-O-Si bonds and Si-OH bonds by the photooxidation.
ISSN:0379-6779
1879-3290
DOI:10.1016/S0379-6779(96)03789-7