Electrical modeling of a pressure sensor MOSFET

This paper presents a simple and efficient analytical model of a MOS transistor-based pressure sensor. Starting from basic MOS equations, we derive a general relation between the gate transconductance and an equivalent gate capacitance that varies with pressure and whose definition represents a majo...

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Bibliographic Details
Published in:Sensors and actuators. A. Physical. 2001-10, Vol.94 (1), p.53-58
Main Authors: Sallese, J.-M, Grabinski, W, Meyer, V, Bassin, C, Fazan, P
Format: Article
Language:English
Subjects:
Applied sciences
CMOS
Electronics
Exact sciences and technology
Gate capacitance
General equipment and techniques
Hybrid microelectronics
thick films
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Microelectronic fabrication (materials and surfaces technology)
Physics
Pressure sensor
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Sensors (chemical, optical, electrical, movement, gas, etc.)
remote sensing
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Summary:This paper presents a simple and efficient analytical model of a MOS transistor-based pressure sensor. Starting from basic MOS equations, we derive a general relation between the gate transconductance and an equivalent gate capacitance that varies with pressure and whose definition represents a major improvement. Furthermore, such relation was found to be nearly independent of the MOS parameters and hence of the fabrication technology, in contrast with previous works. Results obtained with the present model are compared to two-dimensional (2D) simulations and model limitations are discussed in details.
ISSN:0924-4247
1873-3069
DOI:10.1016/S0924-4247(01)00693-8