Instantaneous annealing of CVD diamond during high dose-rate ion implantation

• Published in: Diamond and related materials 1999-03, Vol.8 (2), p.877-881
• Main Authors: Kalish, R, Uzan-Saguy, C, Ran, B, Ferber, H, Guettler, H, Zachai, R
• Format: Article
• Language: English
• Subjects: Annealing; Diamond; Doping; Ion implantation; Ohmic contacts
• ISSN: 0925-9635; 1879-0062
• DOI: 10.1016/S0925-9635(98)00290-8

A novel method of performing hot implantations into CVD diamond films is described. Sample heating during the implantation is achieved by utilizing the high power delivered to the sample by a high-current ion beam (up to 500 μA cm −2) used for the implantation. Temperatures of about 1100 °C can be achieved by this method, thus avoiding the need for post-implantation annealing. It is shown by SIMS profiling, Raman spectroscopy and electrical resistivity measurements that: (1) when implantation starts from room temperature, a graphitic layer forms which when removed leaves a highly doped layer at the diamond surface; and (2) when implantation is started on a preheated sample (also by the ion beam) a highly doped layer located at the position of the ion range is obtained. The material thus obtained is highly conductive (over-doped) and exhibits variable range hopping. The material is very suitable for the realization of ohmic contacts to semiconducting diamond and for the formation of new carbon-based alloys.