High-resolution DLTS studies of vacancy-related defects in irradiated and in ion-implanted n-type silicon

Using high-resolution Laplace deep-level transient spectroscopy (DLTS), we have compared the electron emission characteristics of vacancy-related defects in silicon. The samples include material irradiated with high-energy protons, material implanted with a heavy ion and silicon irradiated with 2 Me...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2000-08, Vol.3 (4), p.237-241
Main Authors: Evans-Freeman, J.H, Peaker, A.R, Hawkins, I.D, Kan, P.Y.Y, Terry, J, Rubaldo, L, Ahmed, M, Watts, S, Dobaczewski, L
Format: Article
Language:English
Subjects:
Divacancy
DLTS
Electrons
Heavy ions
Irradiation damage
Laplace DLTS
Protons
Vacancy
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Summary:Using high-resolution Laplace deep-level transient spectroscopy (DLTS), we have compared the electron emission characteristics of vacancy-related defects in silicon. The samples include material irradiated with high-energy protons, material implanted with a heavy ion and silicon irradiated with 2 MeV electrons. We show that in the proton- and electron-irradiated material the DLTS peak in the region of the (- -/-) state of the divacancy at E c=0.23 eV contains only one feature. The DLTS peak at 250 K which contains the signal derived from the (-/0) state of the divacancy is much larger in ion-implanted silicon than in electron-irradiated silicon. The Laplace DLTS is able to resolve clearly the (-/0) divacancy state and the V–P defect, whereas conventional DLTS shows only a broad peak in that region.
ISSN:1369-8001
1873-4081
DOI:10.1016/S1369-8001(00)00038-X