2-D analytical modeling of drain and gate-leakage currents of cylindrical gate asymmetric halo doped dual material-junctionless accumulation mode MOSFET

• Published in: International journal of electronics and communications 2020-03, Vol.116, p.153071, Article 153071
• Main Authors: Baral, Kamalaksha, Singh, Prince Kumar, Kumar, Sanjay, Singh, Ashish, Tripathy, Manas, Chander, Sweta, Jit, Satyabrata
• Format: Article
• Language: English
• Subjects: Cylindrical gate; Gate leakage; GIDL; Junctionless accumulation mode MOSFET; Reliability
• ISSN: 1434-8411; 1618-0399
• DOI: 10.1016/j.aeue.2020.153071

This paper reports a physics-based analytical model for the cylindrical-gate (CG) asymmetric halo doped graded-channel (GC) dual-material (DM) junctionless-accumulation-mode (JAM) MOSFETs by incorporating both the effects of gate material engineering and channel engineering on the device characteristics. Poisson’s equation has been solved using the superposition technique with appropriate boundary conditions. The minimum central potential concept has been used to derive the threshold voltage model. The drain and gate currents have been modeled by including the effects of gate induced drain leakage (GIDL) and gate leakage currents, respectively. The performance parameters of the proposed CG-GCDM JAM MOSFETs have been compared with those of the CG-DM and CG-GC JAM-MOSFETs to show that the proposed structure has enhanced reliability against short channel effects (SCEs), hot carrier effects (HCEs) and various leakage currents (GIDL and gate leakage) for various control-to-screen gate length ratios. The proposed modeled results have been validated by comparing them with numerical data obtained by using a 3D commercial TCAD simulator.