Preparation of a boron nitride single layer on a polycrystalline Rh surface

• Published in: Applied surface science 2013-01, Vol.264, p.838-844
• Main Authors: Kiss, János, Révész, Károly, Klivényi, Gábor, Solymosi, Frigyes
• Format: Article
• Language: English
• Subjects: Auger fine structures; Boron nitride; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Formation of B[sbnd]N bond; NO dissociation on Rh; Physics; Segregation of boron
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2012.10.157

► The segregation of boron in a Rh foil started from 700K. ► Its presence altered the surface behavior of Rh; the uptake of NO increased by about 30–37%. ► The boron greatly stabilized the adsorbed oxygen and nitrogen formed during NO dissociation. ► A clean, single BN layer formed on the surface, presumable in nanomash structure. The segregation of boron and its reactivity toward nitric oxide have been investigated by means of high-resolution Auger spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), and thermal desorption spectroscopy (TDS). The segregation of boron from a Rh foil started from 700K. Its presence altered the surface behaviors of Rh; the uptake of NO increased by about 30–37%. Whereas the dissociation of NO was about 3–10% on a clean, boron-free surface, the extent of dissociation (at saturation) at highest boron level was almost 98%. This feature strongly suggest a direct interaction between NO and boron on the surface. The presence of boron greatly stabilized the adsorbed nitrogen and oxygen formed in NO dissociation. Boron oxide (BO, B2O2) sublimated from the surface below 1000K. Clean, single BN layer formed on the surface close to a monolayer regime, presumable in nanomash structure.