1T GdN2 monolayer — Spin-orbit induced magnetic Dirac semiconductor stable at room temperature

[Display omitted] Room-temperature magnetic semiconductor has been regarded as essential material for emerging spintronic devices. In recent years, two-dimensional ferromagnetism is even of great interest to explore basic physics in spintronics. Here, we report on 1T GdN2 monolayer as a promising p-...

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Bibliographic Details
Published in:Applied surface science 2020-11, Vol.529, p.147129, Article 147129
Main Authors: Lin, Zheng-Zhe, Chen, Xi
Format: Article
Language:English
Subjects:
2D ferromagnetism
Dirac semiconductor
Spin-orbit coupling
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Summary:[Display omitted] Room-temperature magnetic semiconductor has been regarded as essential material for emerging spintronic devices. In recent years, two-dimensional ferromagnetism is even of great interest to explore basic physics in spintronics. Here, we report on 1T GdN2 monolayer as a promising p-state magnetic Dirac semiconductor. We uncover the mechanism of band shift induced by the exchange of Gd 4f7 half-full shell and the origin of N 2p Dirac bands with unique spin. By virtue of localized rare-earth 4f electrons, strong exchange plays a role in modifying the order of bands. Spin-orbit coupling opens a gap between two Dirac bands with SU(2) spin symmetry breaking and makes 1T GdN2 a relativistic magnetic semiconductor. High Curie temperature and large magnetic anisotropy energy give 1T GdN2 prominent merit to be an ideal spintronic material.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2020.147129