Characterization of alane (AlH3) thin films grown by atomic layer deposition for hydrogen storage applications

• Published in: Applied surface science 2024-11, Vol.672, p.160840, Article 160840
• Main Authors: Okasha, Sameh, Almeida, Trevor P.
• Format: Article
• Language: English
• Subjects: Alane thin film; Atomic layer deposition; Dimethylethylamine alane; Hydrogen storage material
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2024.160840

[Display omitted] •Investigation of the morphology and elemental composition of AlH3 thin film grown by atomic layer deposition.•Comprehensive characterization of the grown thin film by XPS, EDX, and XRD.•Proposing a dissociation reaction mechanism based on the DMEAA precursor, providing fundamental insight on the process of AlH3 formation.•Advancing deposition of AlH3, as hydrogen storage materials, contributes to energy efficiency for future energy applications. Alane (AlH3) is an increasingly favored material for hydrogen and energy storage. It has demonstrated its potential in various applications, including rocket fuel, explosives, reducing agents, and serving as a viable source of hydrogen for portable fuel cells. In this study, we present the fabrication, morphology and elemental characterization of an AlH3 thin film grown through atomic layer deposition using a dimethylethylamine alane (DMEAA; AlH3N(CH3)2(CH2CH3)) precursor. The AlH3 thin film exhibited a rough surface with a white-like appearance, forming coarse grains as observed via scanning electron microscopy. X-ray diffraction confirmed the presence of AlH3 and it was compared with an aluminum thin film. Energy-dispersive X-ray spectroscopy and X-ray photoelectron spectroscopy confirmed the presence of pure AlH3 under a very thin aluminum oxide surface layer. Additionally, we propose a dissociation reaction mechanism based on the DMEAA precursor. Our work contributes to the advancement of hydrogen storage materials and energy-related applications that necessitate high hydrogen storage capacity and energy efficiency.