Structural and phonon transport analysis of surface-activated bonded SiC-SiC homogenous interfaces

• Published in: Applied surface science 2024-12, Vol.678, p.161139, Article 161139
• Main Authors: Zhao, Xinlong, Qu, Yongfeng, Deng, Ningkang, Yuan, Jin, Du, Liang, Hu, Wenbo, Wang, Hongxing
• Format: Article
• Language: English
• Subjects: Molecular dynamics; SiC/SiC interface; Surface activated bonding; Thermal boundary resistance
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2024.161139

[Display omitted] •Low-temperature surface-activated bonding technology successfully applied to silicon carbide-silicon carbide homogeneous interface.•Acquisition of the atomic structure and composition of the interface.•Molecular dynamics simulations to obtain the interfacial thermal conductivity of the interface.•Exploring the semi-quantitative relationship between amorphous layer thickness and interfacial thermal conductivity. To avoid the interfacial thermal stress problem caused by high temperature, room temperature bonding techniques such as surface-activated bonding (SAB) are currently receiving widespread attention. However, the thermal boundary resistance (TBR) is challenging in reaching the theoretical value because the bombardment of the surface by energetic particle beams causes the formation of amorphous layers. In this paper, we have prepared SiC/SiC interfaces by surface-activated bonding and tried to explain the effect of the interfacial amorphous layer on the thermal properties. The results show that an amorphous layer of about 9 nm was formed at the SiC/SiC interface, mainly composed of carbon atoms. Molecular dynamics simulations derive an effective thermal boundary resistance (TBReff) of 4.78 m2K/GW for this interface, where the TBR of SiC/a-C is only approximately 0.50 m2K/GW. The TBReff with 30 % Fe after modification increased to 6.74 m2K/GW. The lower TBR between SiC/a-C can be attributed to coupling extended modes (EMs) and localized modes (LMs) at the interface and acting as a phonon bridge. In addition, the bulk thermal resistance of the amorphous layer accounts for 79.3 % of the TBReff. Besides, the molecular dynamics results show that the decrease in the thickness of the amorphous layer can significantly reduce the TBReff. As the thickness of the amorphous layer tends to zero, the TBReff is almost close to zero. The above conclusions will be beneficial to understanding the main factors influencing the thermal properties in the SiC/SiC interface, which point out the way for the subsequent improvement of the interfacial thermal conductivity.