Inducing controlled blistering by Smart-CutTM process in semiconducting diamond: A STEM study

• Published in: Applied surface science 2025-02, Vol.681, p.161570, Article 161570
• Main Authors: Piñero, J.C., Fernández, D., Lloret, F., Le Van-Jodin, L., Chretien, J., Masanté, C., Araujo, D.
• Format: Article
• Language: English
• Subjects: Amorphization; Diamond; Ion implantation; Smartcut; Thin film
• ISSN: 0169-4332
• DOI: 10.1016/j.apsusc.2024.161570

[Display omitted] •Hot-implantation has been used for a diamond smart-cut process.•Blistering window has been identified.•EELS and HR-STEM evaluates diamond’s lattice after the implantation process.•The formation of graphite nano-layers has been evidenced, and are related to the exfoliation direction. An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. As this process involves H+ implantation, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. So, the identification of a window of parameters that allows to induce controlled blistering is a critical bottleneck towards a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments that were used to evaluate the goodness of a new approach for the Smart-Cut process. Indeed, a window of parameters where graphite nano-layers are formed on the implanted region is identified.