Solid-state synthesis and thermoelectric properties of Bi-doped Mg₂Si compounds

• Published in: Current applied physics 2011-05, Vol.11 (3S), p.S392-S395
• Main Authors: You, Sin-Wook, Kim, Il-Ho
• Format: Article
• Language: English
• Subjects: electrical conductivity; electrons; powders; pressing; thermal conductivity
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2011.03.017

Bi-doped Mg₂Si (Mg₂Si:Biₘ, m = 0, 0.005, 0.01, 0.02, 0.03) was prepared by solid-state synthesis. The electronic transport properties (Hall coefficient, mobility and carrier concentration) and thermoelectric properties (Seebeck coefficient, electrical conductivity, thermal conductivity and figure-of-merit) were examined. Mg₂Si was synthesized successfully by a solid-state reaction at 673 K for 6 h and Bi-doped Mg₂Si powders were obtained by mechanical alloying for 24 h. They were fully consolidated by hot pressing at 1073 K for 1 h. All the Mg₂Si:Biₘ samples exhibited an n-type conduction, indicating that the electrical conduction is mainly due to electrons. The electrical conductivity increased significantly and the absolute value of the Seebeck coefficient decreased with increasing Bi content because the electron concentration was increased considerably from 10¹⁶ to 10²⁰ cm⁻³ by Bi doping. The thermal conductivity was not changed significantly by Bi doping due to the much larger contribution of lattice thermal conductivity over electronic thermal conductivity. The thermal conduction in Bi-doped Mg₂Si was attributed dominantly to the lattice vibrations (phonons). A maximum thermoelectric figure-of-merit of 0.7 was obtained for Mg₂Si:Bi₀.₀₂ at 823 K.