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Tunable electronic properties and optical properties of novel stanene/ZnO heterostructure: First-principles calculation
The calculated band gaps of Sn/ZnO HTS as a function of E-field and strain under different interlayer distances. [Display omitted] In this work, the structural stability, electronic and optical properties of novel stanene/ZnO heterostructure were investigated by using first-principles calculation. T...
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Published in: | Computational materials science 2017-11, Vol.139, p.179-184 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The calculated band gaps of Sn/ZnO HTS as a function of E-field and strain under different interlayer distances.
[Display omitted]
In this work, the structural stability, electronic and optical properties of novel stanene/ZnO heterostructure were investigated by using first-principles calculation. The results show that the lattice constants of Sn/ZnO heterostructure are in good agreement with the previous studies, and the stability of Sn/ZnO with interlayer distance of 3.0Å (h3.0-Sn/ZnO) is better than that of other constructed Sn/ZnO. The band gap of Sn/ZnO can be effectively tuned by interlayer distances, external electric field and strain. Notably, h3.2-Sn/ZnO HTS occurs an indirect-to-direct band gap transition after −1% strain. The absorption coefficient of Sn/ZnO HTS exhibit strongest peak in ultraviolet zone, illustrating that they possess an excellent absorption capability. In general, the calculated results provides a new perspective for the potential application of novel Sn/ZnO in further nanoelectronics. |
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ISSN: | 0927-0256 1879-0801 |
DOI: | 10.1016/j.commatsci.2017.08.001 |