Controlled corrosion behaviors of copper in oxidizer solutions for chemical mechanical polishing: Influence of the decomposition products

The influence of the oxidizers including H2O2, K2S2O8, KMnO4, KClO4, KIO4 and (NH4)2S2O8 on copper chemical mechanical poshing was systematically investigated. Microscopic observations, electrochemical characterizations and X-ray photoelectron spectroscopy depth profile analyses revealed that the co...

Full description

Saved in:
Bibliographic Details
Published in:Corrosion science 2024-09, Vol.238, p.112352, Article 112352
Main Authors: Chang, Pengfei, Huang, Zisheng, Chen, Yulong, Ling, Huiqin, Wu, Yunwen, Li, Ming, Hang, Tao
Format: Article
Language:English
Subjects:
Alkaline corrosion
Copper
Modelling studies
Oxidation
Passivity
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The influence of the oxidizers including H2O2, K2S2O8, KMnO4, KClO4, KIO4 and (NH4)2S2O8 on copper chemical mechanical poshing was systematically investigated. Microscopic observations, electrochemical characterizations and X-ray photoelectron spectroscopy depth profile analyses revealed that the corrosion and removal behaviors were determined by the decomposition product of the oxidizers, other than their oxidizing capabilities. All oxidizers, except the persulfate, generated significant quantities of OH- ions upon decomposition, which formed a dense passivation oxide film on copper surface. While the copper surfaces in the neutral persulfate solutions were porous and loose, promoting the oxidizer to penetrate and further corrode the inner layer. •The effect of six common oxidizers on copper corrosion and chemical mechanical polishing was systematically studied.•The decomposition product, rather than the oxidizing ability, determined the corrosive effect on copper.•OH- ions exhibited a passivating effect on copper in oxidizer solutions.
ISSN:0010-938X
DOI:10.1016/j.corsci.2024.112352