Room temperature electroluminescence from the n-ZnMgO/ZnO/p-ZnMgO heterojunction device grown by ultrasonic spray pyrolysis

• Published in: Chemical physics letters 2006-10, Vol.430 (1), p.183-187
• Main Authors: Bian, Jiming, Liu, Weifeng, Liang, Hongwei, Hu, Lizhong, Sun, Jingchang, Luo, Yingmin, Du, Guotong
• Format: Article
• Language: English
• ISSN: 0009-2614; 1873-4448
• DOI: 10.1016/j.cplett.2006.08.103

(A) Room temperature EL spectra from the n-Zn 0.8Mg 0.2O/ZnO/p-Zn 0.8Mg 0.2O heterojunction device under different forward injection current of (a) 50, (b) 75, (c) 100 and (d) 125 mA. (B) Photograph of room temperature EL from the n-Zn 0.8Mg 0.2O/ZnO/it p-Zn 0.8Mg 0.2O heterojunction device under forward injection current of 100 mA in dark. The heterojunction light-emitting diode with n-Zn 0.8Mg 0.2O/ZnO/p-Zn 0.8Mg 0.2O structure was grown on single-crystal GaAs(1 0 0) substrate by a simple process of ultrasonic spray pyrolysis. The p-type Zn 0.8Mg 0.2O layer was obtained by N–In codoping. A distinct visible electroluminescence with a dominant emission peak centered at ∼450 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origin of electroluminescence emission was supposed to be attributed to a radiative recombination through deep-level defects in the ZnO active layer. The result reported here provides convincing evidence that ZnO based light-emitting devices can be realized at extremely low cost.