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Naphthyl or pyrenyl substituted 2-phenylcarbazoles as hole transporting materials for organic light-emitting diodes

A new series of 9-hexylcarbazole-based hole transporting materials (HTM) with naphthyl or pyrenyl substitutions were synthesized and characterized. The respective glass transition temperatures of the new HTM were estimated to be 58 and 61 °C, which can provide morphologically-stable films for electr...

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Bibliographic Details
Published in:Dyes and pigments 2017-01, Vol.136, p.302-311
Main Authors: Chang, Chih-Hao, Krucaite, Gintare, Lo, Dain, Chen, Yun-Lan, Su, Chu-Chun, Lin, Tzu-Chun, Grazulevicius, Juozas Vidas, Peciulyte, Laura, Grigalevicius, Saulius
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Language:English
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Summary:A new series of 9-hexylcarbazole-based hole transporting materials (HTM) with naphthyl or pyrenyl substitutions were synthesized and characterized. The respective glass transition temperatures of the new HTM were estimated to be 58 and 61 °C, which can provide morphologically-stable films for electroluminescence (EL) applications. The pyrenyl substituted analogue possesses an adequate ionization potential and triplet energy gap of 5.54 eV and 2.48 eV, respectively, which makes it a suitable HTM for use in red phosphorescent organic light-emitting diodes (OLEDs). In contrast, the ionization potential of the naphthyl substituted analogues was estimated to be 5.72 eV, thus the p-type conducting dopant should be introduced for device fabrication. The respective peak efficiencies of the naphthyl and pyrenyl based OLEDs with the p-type dopant were recorded at 15.4% (26.0 cd/A and 24.2 lm/W) and 17.3% (26.1 cd/A and 19.1 lm/W), demonstrating their high potential for EL applications. [Display omitted] •9-Hexylcarbazole-based HTM with naphthyl or pyrenyl substitutions were synthesized.•The hexylcarbazole-based HTMs possess adequate ionization potentials.•The hexylcarbazole-based HTMs are appropriate host materials for p-type dopants.•Red PhOLEDs using the 9-hexylcarbazole derivatives as HTMs.
ISSN:0143-7208
1873-3743
DOI:10.1016/j.dyepig.2016.08.056