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In situ engineering and characterization on the artificial heterostructures of correlated materials with integrated OMBE–ARPES
•We review the key elements and advances of integrated OMBE–ARPES.•OMBE enables atomic-scale engineering on correlated materials.•OMBE increases the variety of materials for ARPES study.•In situ ARPES study deepens the understanding on the properties of thin films.•Integrating OMBE and ARPES brings...
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Published in: | Journal of electron spectroscopy and related phenomena 2015-04, Vol.200, p.347-355 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •We review the key elements and advances of integrated OMBE–ARPES.•OMBE enables atomic-scale engineering on correlated materials.•OMBE increases the variety of materials for ARPES study.•In situ ARPES study deepens the understanding on the properties of thin films.•Integrating OMBE and ARPES brings new opportunities on exploring novel physics.
The combination of oxide molecular beam epitaxy (OMBE) and angle resolved photoemission spectroscopy (ARPES) opens a new field for studying correlated electron systems. The in situ growth of single crystalline films by OMBE increases the variety of materials available for ARPES study. Investigating the electronic structure of thin films by ARPES deepens our understanding on the interaction of different degrees of freedom at thin films and interfaces. In this paper, we review the key elements of the integrated OMBE–ARPES technique and some representative works, including the in situ ARPES investigations on thin films with cubic perovskite structure, ultra-thin films with thickness dependent metal–insulator transition, the composition and strain dependence of interfacial superconductivity, and correlated behavior in superlattices. These examples illustrate the new opportunities brought by integrating OMBE and ARPES on exploring novel physical states and functional materials. |
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ISSN: | 0368-2048 1873-2526 |
DOI: | 10.1016/j.elspec.2015.06.002 |