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XRD studies of an electrochemically co-deposited Cu–Zn–Sn precursor and formation of a Cu2ZnSnSe4 absorber for thin-film solar cells
A Cu–Zn–Sn (CZT) precursor film on Mo/soda lime glass was electrochemically co-deposited in a stirred citrate solution and further annealed and selenized at elevated temperatures. Modern x-ray diffraction and Raman spectroscopy methods have been used for determination of the phase composition of as-...
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Published in: | Journal of alloys and compounds 2016-01, Vol.655, p.281-289 |
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Main Authors: | , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | A Cu–Zn–Sn (CZT) precursor film on Mo/soda lime glass was electrochemically co-deposited in a stirred citrate solution and further annealed and selenized at elevated temperatures. Modern x-ray diffraction and Raman spectroscopy methods have been used for determination of the phase composition of as-deposited, preliminary annealed and selenized precursor films. It has been determined that the as-deposited CZT film contains up to four metallic phases: the hexagonal η-Cu6.26Sn5, tetragonal Sn, cubic γ-Cu5Zn8, and cubic β′-CuZn phase. During the CZT preliminary annealing at a temperature of 230 °C pure tin only melted and crystallized into the tetragonal Sn phase when the sample was naturally cooling down. When preliminary annealing was conducted at a temperature of 350 °C the whole pure tin was used for the formation of Sn solid solutions both in η-Cu6.26Sn5 and γ-Cu5Zn8 phases. However, a segregation of Sn was found out after ageing of pre-annealed precursor for 2 days. XRD studies of CZT films selenized at temperatures 350–500 °C have shown that formation of Cu2ZnSnSe4 (CZTSe) started at temperatures of about 400 °C, however, the selenized film contained a large quantity of ZnSe phase and somewhat less that of CuSe. The amount of ZnSe decreased with selenization temperature until it became undetectable by XRD at a temperature of 500 °C. The paper also deals with the possible routes of Cu2ZnSnSe4 formation.
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•Cu–Zn–Sn thin film electrochemically co-deposited in stirred citrate solution.•Phase composition of as-deposited thin film determined by grazing incidence XRD.•Sn solid solution formation in Cu–Zn and Cu–Sn intermetallic compounds established.•Segregation of Sn found out in pre-annealed Cu–Zn–Sn thin film.•Dependence of ZnSe quantity on selenization temperature of Cu–Zn–Sn established. |
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ISSN: | 0925-8388 1873-4669 |
DOI: | 10.1016/j.jallcom.2015.09.186 |