High-performance self-powered perovskite photodetectors enabled by Nb2CTx-passivated buried interface

• Published in: Journal of alloys and compounds 2024-11, Vol.1004, p.175903, Article 175903
• Main Authors: Shafique, Shareen, Qadir, Akeel, Iqbal, Taimoor, Sulaman, Muhammad, Yang, Liu, Hou, Yanna, Miao, Yuchen, Wu, Jun, Wang, Yuheng, Zheng, Fei, Wang, Xu, Hu, Ziyang
• Format: Article
• Language: English
• Subjects: Buried interface; MXene; Nb2CTx; Perovskite; Photodetector; Self-powered photodetector
• ISSN: 0925-8388
• DOI: 10.1016/j.jallcom.2024.175903

Defect-induced charge carrier recombination at the interface of charge transport layers and perovskite layer is a major limiting factor in the performance of perovskite photodetectors. Buried interface defect passivation presents a distinctive approach to reducing dark current and improving responsivity and detectivity in photodetectors. Herein, we propose a novel strategy for passivating buried interface defects by incorporating Nb2CTx at the perovskite/hole transport layer (HTL) interface to enhance optoelectronic performance of self-powered perovskite photodetectors. These strategies effectively improve charge transfer within the HTLs and suppress charge carrier recombination. Without an external bias, utilizing the Nb2CTx buried interface layer enables the achievement of exceptionally high responsivity and detectivity values of 0.23 A/W and 1.27×1011 Jones, respectively, significantly outperforming the reference device. Moreover, our findings reveal an impressively broad linear dynamic range of approximately 140 dB, accompanied by rapid rise and fall times of 14.4 μs and 2.10 μs, respectively. This study illustrates a straightforward yet efficient approach for passivating buried interface defects using Nb2CTx in photodetectors, making Nb2CTx a promising material for applications in photodetectors, light-emitting diodes, photovoltaics, sensors, and more. •A novel self-powered perovskite photodetector has been developed featuring a buried Nb2CTx interface layer.•The Nb2CTx buried interface layer was introduced between NiOx and the perovskite layer.•Buried interface defect passivation effectively reduces nonradiative recombination and improves the photocurrent.•The optimized self-powered photodetector exhibits responsivity and detectivity values of 0.23 A/W and 1.27×1011 Jones, respectively.