Oxidation of ß-SiC at high temperature in Ar/O2, Ar/CO2, Ar/H2O gas mixtures: Kinetic study of the silica growth in the passive regime

• Published in: Journal of the European Ceramic Society 2018-10, Vol.38 (13), p.4309-4319
• Main Authors: Brisebourg, Mathieu Q., Rebillat, Francis, Teyssandier, Francis
• Format: Article
• Language: English
• Subjects: Active; Kinetics; Oxidation; Passive; SiC
• ISSN: 0955-2219; 1873-619X
• DOI: 10.1016/j.jeurceramsoc.2018.05.029

The kinetics of silica growth during passive oxidation of SiC was studied using an original interferometric method carried out in a reactor specifically designed for that purpose. The influence of various oxidant species, O2, H2O, CO2 as well as their mixtures was investigated in a high temperature domain ranging from 1550 °C to 1850 °C at atmospheric pressure. This method is an efficient way to measure the various oxidation regimes usually described by the Deal-Grove model. Both the linear and parabolic rate constants are found to be independent of gas phase composition above 1700 °C, and to increase with oxygen partial pressure below 1700 °C for PO2 > 20 kPa. In the parabolic growth regime, we observed a transition from a low temperature interstitial-dominant to a high temperature network-dominant oxygen transport in the silica scale. The present results suggest the existence of a similar transition in the linear growth regime.