Stress-mediated solution deposition method to stabilize ferroelectric BiFe1-xCrxO3 perovskite thin films with narrow bandgaps

• Published in: Journal of the European Ceramic Society 2021-06, Vol.41 (6), p.3404-3415
• Main Authors: Jiménez, Ricardo, Ricote, Jesús, Bretos, Iñigo, Jiménez Riobóo, Rafael J., Mompean, Federico, Ruiz, Ana, Xie, Haibing, Lira-Cantú, Mónica, Calzada, M. Lourdes
• Format: Article
• Language: English
• Subjects: Bandgap; Bismuth ferrite; Chemical solution deposition; Ferroelectricity; Thin film
• ISSN: 0955-2219; 1873-619X
• DOI: 10.1016/j.jeurceramsoc.2020.12.042

Ferroelectric oxides with low bandgaps are mainly based on the BiFeO3 perovskite upon the partial substitution of iron with different cations. However, the structural stability of many of these perovskites is only possible by their processing at high pressures (HP, >1GPa) and high temperatures (HT, >700ºC). Preparation methods under these severe conditions are accessible to powders and bulk ceramics. However, transferring these conditions to the fabrication of thin films is a challenge, thus limiting their use in applications. Here, a chemical solution deposition method is devised, which overcomes many of these restrictions. It is based on the application of an external compressive-stress to the film sample during the thermal treatment required for the film crystallization, promoting the formation and stabilization of these HP perovskites. We demonstrate the concept on BiFe1-xCrxO3 (BFCO) thin films deposited on SrTiO3 (STO) substrates and with large chromium contents. The resulting BFCO perovskite films show narrow bandgaps (Eg∼2.57 eV) and an excellent ferroelectric response (remnant polarization, PR∼ 40 μC cm−2). The polarized thin films under illumination present a large out-put power of ∼6.4 μW cm−2, demonstrating their potential for using in self-powered multifunctional devices. This stress-mediated solution deposition method can be extended to other perovskite films which are unviable under conventional deposition methods.