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Multilevel resistive switching and synaptic plasticity of nanoparticulated cobaltite oxide memristive device
•Fabricated nanoparticulated cobaltite oxide memristive device for multilevel resistive switching and synaptic learning.•Device showed forming-free resistive switching and two-valued charge-flux properties.•Demonstrated the compliance current- and RESET voltage-dependent resistive switching memory p...
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Published in: | Journal of materials science & technology 2021-07, Vol.78, p.81-91 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | •Fabricated nanoparticulated cobaltite oxide memristive device for multilevel resistive switching and synaptic learning.•Device showed forming-free resistive switching and two-valued charge-flux properties.•Demonstrated the compliance current- and RESET voltage-dependent resistive switching memory properties.•Mimicked the potentiation-depression and four complex spike time-dependent plasticity rules.
Multilevel resistive switching (RS) is a key property to embrace the full potential of memristive devices for non-volatile memory and neuromorphic computing applications. In this study, we employed nanoparticulated cobaltite oxide (Co3O4) as a model material to demonstrate the multilevel RS and synaptic learning capabilities because of its multiple and stable redox state properties. The Pt/Co3O4/Pt memristive device exhibited tunable RS properties with respect to different voltages and compliance currents (CC) without the electroforming process. That is, the device showed voltage-dependent RS at a higher CC whereas CC-dependent RS was observed at lower CC. The device showed four different resistance states during endurance and retention measurements and non-volatile memory results indicated that the CC-based measurement had less variation. Besides, we investigated the basic and complex synaptic plasticity properties using the analog current-voltage characteristics of the Pt/Co3O4/Pt device. In particular, we mimicked the potentiation–depression and four-spike time-dependent plasticity (STDP) rules such as asymmetric Hebbian, asymmetric anti-Hebbian, symmetric Hebbian, and symmetric anti-Hebbian learning rules. The results of the present work indicate that the cobaltite oxide is an excellent nanomaterial for both multilevel RS and neuromorphic computing applications. |
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ISSN: | 1005-0302 1941-1162 |
DOI: | 10.1016/j.jmst.2020.10.046 |