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Enhanced energy storage performance in Na(Nb,Ta)O3-doped Ba(Ti,Ca)O3-based ceramics through bidirectional optimization strategy
•Tailing polarization and relaxation behavior through the bidirectional optimization strategy.•NNT substitution improved the comprehensive energy storage performance.•The wrec and ƞ achieved 3.57 J/cm3 and 87.5% at 220 kV/cm, respectively at x = 0.09. (1-x)(0.9Ba1.003Ti0.97Ca0.03O3–0.1(Bi0.51Na0.47)...
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Published in: | Materials research bulletin 2024-05, Vol.173, p.112664, Article 112664 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
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Summary: | •Tailing polarization and relaxation behavior through the bidirectional optimization strategy.•NNT substitution improved the comprehensive energy storage performance.•The wrec and ƞ achieved 3.57 J/cm3 and 87.5% at 220 kV/cm, respectively at x = 0.09.
(1-x)(0.9Ba1.003Ti0.97Ca0.03O3–0.1(Bi0.51Na0.47)0.94Ba0.06TiO3)-xNa(Nb0.85Ta0.15)O3 (x = 0.03–0.15) ceramics were designed and fabricated through a bidirectional optimization strategy using traditional solid reaction method. The results revealed that the introduction of Na(Nb0.85Ta0.15)O3 increased the vacancy concentration at the A site, conducing to improved polarization and reduced grain size. The substitution at the B site disrupted the long-range ordered ferroelectric domains and generated polar nanodomains, leading to enhanced relaxation behavior. The optimum energy storage density of 3.57 J/cm3 and efficiency of 87.5% were simultaneously achieved under the electric field of 220 kV/cm in the sample with x = 0.09. Moreover, it also exhibits extremely high-power density (∼57 MW/cm3), ultrafast discharge time (∼103 ns), high discharge density (1.35 J/cm3), along with excellent temperature (30‒120 °C) and frequency stability (1‒100 Hz) under the equivalent electric field of 120 kV/cm. This novel design strategy provides theoretical guidance for the development of advanced electrical energy storage devices.
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ISSN: | 0025-5408 1873-4227 |
DOI: | 10.1016/j.materresbull.2023.112664 |