Quantum size effects and transport phenomena in thin Bi layers

For thin Bi films with thicknesses d=10–60nm the dependences of the Hall coefficient, Seebeck coefficient, electrical conductivity, and Hall carrier mobility on d have been obtained at room temperature. Distinct oscillations of the transport properties with period Δd=(5±1)nm have been observed in th...

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Bibliographic Details
Published in:Microelectronics 2009-04, Vol.40 (4-5), p.728-730
Main Authors: Rogacheva, E.I., Lyubchenko, S.G., Nashchekina, O.N., Meriuts, A.V., Dresselhaus, M.S.
Format: Article
Language:English
Subjects:
Bismuth
Quantum size effects
Thin film
Transport properties
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Summary:For thin Bi films with thicknesses d=10–60nm the dependences of the Hall coefficient, Seebeck coefficient, electrical conductivity, and Hall carrier mobility on d have been obtained at room temperature. Distinct oscillations of the transport properties with period Δd=(5±1)nm have been observed in the thickness range d=25–60nm and attributed to quantization of the energy spectrum of holes. It has been suggested that a deep minimum observed in the thickness dependences of the kinetic coefficients at d∼25nm is connected with the manifestation of the electronic spectrum quantization and/or manifestation of a semimetal–semiconductor transition. The experimental data are in good agreement with the results of theoretical calculations.
ISSN:1879-2391
1879-2391
DOI:10.1016/j.mejo.2008.11.007