Electronic transport in doped and dielectric inserted MLGNR interconnects: Crosstalk induced delay and stability analyses at sub-threshold regime

• Published in: Microelectronics 2022-10, Vol.128, p.105524, Article 105524
• Main Authors: Sidhu, Ramneek, Rai, Mayank Kumar
• Format: Article
• Language: English
• Subjects: Dielectric inserted MLGNR; Gain margin; Interconnects; Mean free path; Phase margin; Stability
• ISSN: 1879-2391; 1879-2391
• DOI: 10.1016/j.mejo.2022.105524

A simplified equivalent distributed temperature-dependent RLC circuit model of coupled multilayer graphene nanoribbon (MLGNR) interconnects has been discussed by considering the relaxation time induced mean free path (MFP), and its impact on line resistance (R) has been examined in detail. Further, the performance of copper, undoped, doped and dielectric inserted MLGNRs has been compared in terms of crosstalk induced delay and frequency response at sub-threshold operating conditions. It is revealed that the various scattering mechanisms (acoustic scatterings, edge roughness etc.) control the overall MFP in undoped and doped MLGNRs, however, the electron MFP in dielectric inserted MLGNRs depends on surrounding dielectric environment. Out of the five different cases of dielectric inserted MLGNRs, the insertion of hafnium oxide (HfO2) between GNR layers, along with silicon dioxide (SiO2) provides the best performance characteristics. To obtain minimum crosstalk delay at the subthreshold operating mode, copper, undoped, doped, and dielectric inserted MLGNRs have been optimized for thicknesses of 36, 38.25, 41.4, and 43.65 nm.