Single event performance of FED based SRAMs using numerical simulation

• Published in: Microelectronics and reliability 2023-03, Vol.142, p.114930, Article 114930
• Main Authors: PanneerSelvam, Sasikala, Pal, Susanta Kumar, Chandramani, Premanand Venkatesh, Raj, Srinivasan
• Format: Article
• Language: English
• Subjects: Bipolar gain, single event transients; Charge collection; Field effect diode (FED); Heavy ion; Single-event upset; TCAD
• ISSN: 0026-2714; 1872-941X
• DOI: 10.1016/j.microrel.2023.114930

In this work, single event performance of field effect diode (FED) devices have been investigated. Three variations of FED structures have been taken up for the study, and they are, (i) regular FED, (ii) modified FED-I, and (iii) modified FED-II. The study can be split into parts, (i) single event transients (SET) in the FED devices which is used to extract the sensitive location of the device, and (ii) single event upsets in FED-based SRAM cells which is used to extract the critical radiation dose i.e. the minimum dose required to flip the cell content. Among the three FED structures, the collected charge due to SET is maximum in regular FED structure, and the critical dose is minimum in regular FED structure. From the MOSFET literature, it has been found that the single event performances of the MOSFET devices are much superior to the FED devices. •Devices at lower dimensions are more sensitive to radiation.•Three different FED structures, and 6T-SRAMs based on these three devices have been analyzed.•Single event drain current perturbations, collected charge and bipolar gains of all the FED structures have been extracted.•Regular FED device, and the SRAM based on this device are more sensitive to radiation strikes.