Electroluminescence from Er-doped SiO2/nc-Si multilayers under lateral carrier injection

Infrared photoluminescence (PL) and electroluminescence (EL) near 1.5μm from Er-doped SiO2/nc-Si multilayers are reported. A novel, effective method of lateral carrier injection is demonstrated in forward bias. The in-plane geometry increases the current density over those typically reported from Er...

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Bibliographic Details
Published in:Materials science & engineering. B, Solid-state materials for advanced technology Solid-state materials for advanced technology, 2012-10, Vol.177 (17), p.1547-1550
Main Authors: Krzyżanowska, H., Ni, K.S., Fu, Y., Fauchet, P.M.
Format: Article
Language:English
Subjects:
Electroluminescence
Er doped SiO2/nc-Si multilayers
Lateral carrier injection
Photoluminescence
VLSI
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Summary:Infrared photoluminescence (PL) and electroluminescence (EL) near 1.5μm from Er-doped SiO2/nc-Si multilayers are reported. A novel, effective method of lateral carrier injection is demonstrated in forward bias. The in-plane geometry increases the current density over those typically reported from Er doped SiO2 layers containing Si nanocrystals under vertical carrier injection. The observed strong PL under off-resonance excitation for Er in SiO2 and EL under forward bias are very promising for Si-based light sources – the missing link in an all-silicon on-chip optical interconnection system.
ISSN:0921-5107
1873-4944
DOI:10.1016/j.mseb.2011.12.032