Mapping of ion-implanted n-SiC schottky contacts using scanning internal photoemission microscopy

Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80keV with an ion dose of 1×1015cm−2. A photocurrent, Y (photoyield; defined as photocurrent per...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2017-11, Vol.70, p.86-91
Main Authors: Murase, Shingo, Mishima, Tomoyoshi, Nakamura, Tohru, Shiojima, Kenji
Format: Article
Language:English
Subjects:
Damage characterization
Ion implantation
Scanning internal photoemission microscopy
Schottky contact
SiC
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Summary:Nitrogen-ion-implantation damage on SiC has been clearly imaged using scanning internal photoemission microscopy (SIPM). Ni Schottky contacts were formed on selectively N-ion-implanted n-SiC surfaces at 80keV with an ion dose of 1×1015cm−2. A photocurrent, Y (photoyield; defined as photocurrent per incident photon), was detected by focusing and scanning a laser beam over the contacts. The N-ion-implanted regions were clearly imaged with Y measurements. Y was detected even where the implanted region is protruding out of the electrode in the unannealed sample. We also found significant increase of Y in the periphery of the ion-implanted region. We confirmed that SIPM is a powerful tool for mapping damages due to ion implantation.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2016.10.055