Characterization of deep defects in boron-doped CVD diamond films using transient photocapacitance method

We have developed a highly-sensitive transient photocapacitance measurement (TPM) system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microw...

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Bibliographic Details
Published in:Materials science in semiconductor processing 2017-11, Vol.70, p.203-206
Main Authors: Maida, Osamu, Hori, Takanori, Kodama, Taishi, Ito, Toshimichi
Format: Article
Language:English
Subjects:
Deep defect
Diamond film
Homoepitaxy
Photocapacitance
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Summary:We have developed a highly-sensitive transient photocapacitance measurement (TPM) system for deep defects in wide bandgap materials, and applied it to characterize the boron-doped diamond films grown on a high-pressure/high-temperature-synthesized Ib diamond substrate using high-power-density microwave-plasma chemical vapor deposition method. The developed TPM system has both a low detection limit of less than 0.5 fF for changes in the photocapacitance and a low measurement temperature drift of less than 0.03K in 12h. By using the TPM system, we have successfully found an acceptor-type defect around 1.2eV above the valence-band maximum for the B-doped diamond film with a considerably high crystalline quality that had some strong exciton emission peaks in the cathodoluminescence spectra taken at ≈80K. The photoionization cross section and the defect density estimated for the observed defect were 3.1×10–15cm2 and 2.8×1016cm−3, respectively.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2016.12.001