Electro-thermal modeling for InxGa1-xN/GaN based quantum well heterostructures

The joint effect of the heat transfer and the electronic properties in the InGaN/GaN based quantum well (QW) heterostructures has been investigated theoretically and numerically. One-dimensional Schrödinger equation solver coupled with Poisson equation solver and Dual-phase-lagging (DPL) heat conduc...

Full description

Saved in:
Bibliographic Details
Published in:Materials science in semiconductor processing 2019-04, Vol.93, p.231-237
Main Authors: Gazzah, Mohamed Hichem, Chouchen, Bilel, Fargi, Abdelaali, Belmabrouk, Hafedh
Format: Article
Language:English
Subjects:
Dual-phase-lagging model
Indium composition
InGaN heterostructure
Nanoscale heat transfer
Polarization charge
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The joint effect of the heat transfer and the electronic properties in the InGaN/GaN based quantum well (QW) heterostructures has been investigated theoretically and numerically. One-dimensional Schrödinger equation solver coupled with Poisson equation solver and Dual-phase-lagging (DPL) heat conduction solver has been developed. The numerical results suggest that the DPL heat conduction equations capture the microscale responses caused by the phonon-electron interaction. Both effects of the polarization charge and conduction band offset between the InGaN/GaN interfaces lead to the creation of the two-dimensional electron gas (2DEG) on the lower interface of the QW. It is found that the 2DEG density at the triangular quantum well increases with increasing Indium (In) composition. This increase is the same for the conduction band offset and the electron density. As a consequence, an increase of the heat dissipation and the temperature is observed at the lower interface of the quantum well.
ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2019.01.011