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Effect of Alkyl Substituents on the Electrical Properties of Thieno[2,3-b]thiophene Derivatives in Solution-Processed Organic Thin-Film Transistor Applications
Three solution-processable small-molecule thieno[2,3-b]thiophene (2,3-bTT) derivatives—2,5-bis(5-(2-ethylhexyl)thiophen-2-yl)thieno[2,3-b]thiophene (compound 1), 2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 2), and 3,4-dimethyl-2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (co...
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Published in: | Materials science in semiconductor processing 2025-03, Vol.188, p.109250, Article 109250 |
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description | Three solution-processable small-molecule thieno[2,3-b]thiophene (2,3-bTT) derivatives—2,5-bis(5-(2-ethylhexyl)thiophen-2-yl)thieno[2,3-b]thiophene (compound 1), 2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 2), and 3,4-dimethyl-2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 3)—were synthesized with a focus on the effect of alkyl chain structure (linear vs. branched) and backbone modifications on the electrical properties of the 2,3-bTT derivatives. Their thermal and optical properties were examined for potential application in the channel layer of organic thin-film transistors (OTFTs). Atomic force microscopy (AFM) and X-ray diffraction (XRD) were employed to investigate the surface characteristics and microstructural features of each compound. Thin films based on the 2,3-bTT compounds were incorporated as a channel layer of top-contact/bottom-gate OTFTs. The compounds exhibited p-channel characteristics, with compound 2, featuring linear alkyl chains and an unmodified 2,3-bTT backbone, resulting in minimal steric hindrance and enhanced molecular packing efficiency, demonstrated the highest electrical performance, exhibiting a hole mobility of up to 0.03 cm2/V·s and a current on/off ratio exceeding 106.
Thieno[2,3-b]thiophene (2,3-bTT) based organic semiconductors were utilized as an active layer in organic field-effect transistors (OFETs). The fabricated devices exhibited hole mobility up to 0.03 cm2/V·s. [Display omitted] |
doi_str_mv | 10.1016/j.mssp.2024.109250 |
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Thieno[2,3-b]thiophene (2,3-bTT) based organic semiconductors were utilized as an active layer in organic field-effect transistors (OFETs). The fabricated devices exhibited hole mobility up to 0.03 cm2/V·s. [Display omitted]</description><identifier>ISSN: 1369-8001</identifier><identifier>DOI: 10.1016/j.mssp.2024.109250</identifier><language>eng</language><publisher>Elsevier Ltd</publisher><subject>alkyl substituents ; Organic field-effect transistor ; organic semiconductors ; solution-process ; thieno[2,3-b]thiophene derivatives</subject><ispartof>Materials science in semiconductor processing, 2025-03, Vol.188, p.109250, Article 109250</ispartof><rights>2024</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c960-fca6d3bd97f3aac862cd995a8132be569dc043d15d690caf331214000849f36f3</cites><orcidid>0000-0001-7494-0677</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27923,27924</link.rule.ids></links><search><creatorcontrib>Kim, Jinyeob</creatorcontrib><creatorcontrib>Kang, Hyowon</creatorcontrib><creatorcontrib>Kim, Choongik</creatorcontrib><creatorcontrib>Seo, SungYong</creatorcontrib><title>Effect of Alkyl Substituents on the Electrical Properties of Thieno[2,3-b]thiophene Derivatives in Solution-Processed Organic Thin-Film Transistor Applications</title><title>Materials science in semiconductor processing</title><description>Three solution-processable small-molecule thieno[2,3-b]thiophene (2,3-bTT) derivatives—2,5-bis(5-(2-ethylhexyl)thiophen-2-yl)thieno[2,3-b]thiophene (compound 1), 2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 2), and 3,4-dimethyl-2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 3)—were synthesized with a focus on the effect of alkyl chain structure (linear vs. branched) and backbone modifications on the electrical properties of the 2,3-bTT derivatives. Their thermal and optical properties were examined for potential application in the channel layer of organic thin-film transistors (OTFTs). Atomic force microscopy (AFM) and X-ray diffraction (XRD) were employed to investigate the surface characteristics and microstructural features of each compound. Thin films based on the 2,3-bTT compounds were incorporated as a channel layer of top-contact/bottom-gate OTFTs. The compounds exhibited p-channel characteristics, with compound 2, featuring linear alkyl chains and an unmodified 2,3-bTT backbone, resulting in minimal steric hindrance and enhanced molecular packing efficiency, demonstrated the highest electrical performance, exhibiting a hole mobility of up to 0.03 cm2/V·s and a current on/off ratio exceeding 106.
Thieno[2,3-b]thiophene (2,3-bTT) based organic semiconductors were utilized as an active layer in organic field-effect transistors (OFETs). The fabricated devices exhibited hole mobility up to 0.03 cm2/V·s. [Display omitted]</description><subject>alkyl substituents</subject><subject>Organic field-effect transistor</subject><subject>organic semiconductors</subject><subject>solution-process</subject><subject>thieno[2,3-b]thiophene derivatives</subject><issn>1369-8001</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2025</creationdate><recordtype>article</recordtype><recordid>eNp9kM1KAzEURmehYK2-gKs8gFPz04kNuCm1VaGg0O5EQprc2NRpMiRpwafxVc1Q164uXL7z3cupqhuCRwQTfrcb7VPqRhTTcVkI2uCzakAYF_UEY3JRXaa0wxg3lPBB9TO3FnRGwaJp-_XdotVhk7LLB_A5oeBR3gKatyUSnVYteouhg5gdpB5Zbx348E5vWb35yFsXui14QI8Q3VFldywp59EqtIfsgq8LrCElMOg1firvdF_g64Vr92gdlU8u5RDRtOvacqxH0lV1blWb4PpvDqv1Yr6ePdfL16eX2XRZa8FxbbXihm2MuLdMKT3hVBshGjUhjG6g4cJoPGaGNIYLrJVljFAyLhImY2EZt2xY0VOtjiGlCFZ20e1V_JYEy96q3MnequytypPVAj2cICiPHR1EmXTxocG4WIRJE9x_-C98AIZ7</recordid><startdate>202503</startdate><enddate>202503</enddate><creator>Kim, Jinyeob</creator><creator>Kang, Hyowon</creator><creator>Kim, Choongik</creator><creator>Seo, SungYong</creator><general>Elsevier Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-7494-0677</orcidid></search><sort><creationdate>202503</creationdate><title>Effect of Alkyl Substituents on the Electrical Properties of Thieno[2,3-b]thiophene Derivatives in Solution-Processed Organic Thin-Film Transistor Applications</title><author>Kim, Jinyeob ; Kang, Hyowon ; Kim, Choongik ; Seo, SungYong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c960-fca6d3bd97f3aac862cd995a8132be569dc043d15d690caf331214000849f36f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2025</creationdate><topic>alkyl substituents</topic><topic>Organic field-effect transistor</topic><topic>organic semiconductors</topic><topic>solution-process</topic><topic>thieno[2,3-b]thiophene derivatives</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kim, Jinyeob</creatorcontrib><creatorcontrib>Kang, Hyowon</creatorcontrib><creatorcontrib>Kim, Choongik</creatorcontrib><creatorcontrib>Seo, SungYong</creatorcontrib><collection>CrossRef</collection><jtitle>Materials science in semiconductor processing</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kim, Jinyeob</au><au>Kang, Hyowon</au><au>Kim, Choongik</au><au>Seo, SungYong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effect of Alkyl Substituents on the Electrical Properties of Thieno[2,3-b]thiophene Derivatives in Solution-Processed Organic Thin-Film Transistor Applications</atitle><jtitle>Materials science in semiconductor processing</jtitle><date>2025-03</date><risdate>2025</risdate><volume>188</volume><spage>109250</spage><pages>109250-</pages><artnum>109250</artnum><issn>1369-8001</issn><abstract>Three solution-processable small-molecule thieno[2,3-b]thiophene (2,3-bTT) derivatives—2,5-bis(5-(2-ethylhexyl)thiophen-2-yl)thieno[2,3-b]thiophene (compound 1), 2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 2), and 3,4-dimethyl-2,5-bis(5-octylthiophen-2-yl)thieno[2,3-b]thiophene (compound 3)—were synthesized with a focus on the effect of alkyl chain structure (linear vs. branched) and backbone modifications on the electrical properties of the 2,3-bTT derivatives. Their thermal and optical properties were examined for potential application in the channel layer of organic thin-film transistors (OTFTs). Atomic force microscopy (AFM) and X-ray diffraction (XRD) were employed to investigate the surface characteristics and microstructural features of each compound. Thin films based on the 2,3-bTT compounds were incorporated as a channel layer of top-contact/bottom-gate OTFTs. The compounds exhibited p-channel characteristics, with compound 2, featuring linear alkyl chains and an unmodified 2,3-bTT backbone, resulting in minimal steric hindrance and enhanced molecular packing efficiency, demonstrated the highest electrical performance, exhibiting a hole mobility of up to 0.03 cm2/V·s and a current on/off ratio exceeding 106.
Thieno[2,3-b]thiophene (2,3-bTT) based organic semiconductors were utilized as an active layer in organic field-effect transistors (OFETs). The fabricated devices exhibited hole mobility up to 0.03 cm2/V·s. [Display omitted]</abstract><pub>Elsevier Ltd</pub><doi>10.1016/j.mssp.2024.109250</doi><orcidid>https://orcid.org/0000-0001-7494-0677</orcidid></addata></record> |
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subjects | alkyl substituents Organic field-effect transistor organic semiconductors solution-process thieno[2,3-b]thiophene derivatives |
title | Effect of Alkyl Substituents on the Electrical Properties of Thieno[2,3-b]thiophene Derivatives in Solution-Processed Organic Thin-Film Transistor Applications |
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