Chiral silicon nanostructures

Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [001] silicon substrates in a temperature range from room temperature to 475°C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400°C to 80...

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Bibliographic Details
Published in:Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2006-03, Vol.244 (1), p.40-44
Main Authors: Schubert, E., Fahlteich, J., Höche, Th, Wagner, G., Rauschenbach, B.
Format: Article
Language:English
Subjects:
Glancing angle deposition
Raman spectroscopy
Recrystallisation
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Summary:Glancing angle ion beam assisted deposition is used for the growth of amorphous silicon nanospirals onto [001] silicon substrates in a temperature range from room temperature to 475°C. The nanostructures are post-growth annealed in an argon atmosphere at various temperatures ranging from 400°C to 800°C. Recrystallization of silicon within the persisting nanospiral configuration is demonstrated for annealing temperatures above 800°C. Transmission electron microscopy and Raman spectroscopy are used to characterize the silicon samples prior and after temperature treatment.
ISSN:0168-583X
1872-9584
DOI:10.1016/j.nimb.2005.11.011