Room temperature ferromagnetism of Co doped TiO2 using ion implantation and defect engineering

• Published in: Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms Beam interactions with materials and atoms, 2006-09, Vol.250 (1-2), p.279-282
• Main Authors: Lee, J.-K., Jung, H.S., Valdez, J.A., Hundley, M.F., Thompson, J.D., Sickafus, K.E., Nastasi, M., Hamby, D.W., Lucca, D.A.
• Format: Article
• Language: English
• Subjects: Ferromagnetic semiconductor; Ion implantation; TiO2
• ISSN: 0168-583X; 1872-9584
• DOI: 10.1016/j.nimb.2006.04.171

Ferromagnetic (FM) semiconductors obtained by doping ferromagnetic elements into a nonmagnetic semiconductor matrix are essential for the second generation of spintronics devices. In this study, we investigate Co doping behavior and subsequent magnetic properties in Co implanted and thermally annealed TiO2. In TiO2 single crystals, a decrease in the oxygen partial pressure during thermal annealing is found to enhance the Co substitutional fraction by increasing the concentration of oxygen vacancies. Magnetic properties determined from superconducting quantum interference device magnetometer (SQUID) measurements show that TiO2 crystals with a large fraction of substitutional Co are ferromagnetic at room temperature. In addition to single crystals, the feasibility of Co doping via ion implantation is studied in sol–gel synthesized TiO2 thin films. Results from grazing incidence X-ray diffraction (GIXRD) show that the implantation can produce Co doped TiO2 thin films and that the Co incorporation into Ti lattice site accompanies the transition from rutile to anatase phase. These results show that ion beam synthesis is a useful tool for producing ferromagnetic TiO2 with a high Curie temperature (TC).