Spin effects in InSb quantum wells

Among the III–V semiconductors, InSb has the smallest electron effective mass and the largest g-factor. We make use of these properties to explore some aspects of electron spin in InSb quantum wells with far-infrared magneto-spectroscopy. We observe the clear signature of spin-resolved cyclotron res...

Full description

Saved in:
Bibliographic Details
Published in:Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2004, Vol.20 (3), p.386-391
Main Authors: Khodaparast, G.A., Meyer, R.C., Zhang, X.H., Kasturiarachchi, T., Doezema, R.E., Chung, S.J., Goel, N., Santos, M.B., Wang, Y.J.
Format: Article
Language:English
Subjects:
Cyclotron resonance
Heterostructures
Magneto-optics
Spin effects
Spin resonance
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Among the III–V semiconductors, InSb has the smallest electron effective mass and the largest g-factor. We make use of these properties to explore some aspects of electron spin in InSb quantum wells with far-infrared magneto-spectroscopy. We observe the clear signature of spin-resolved cyclotron resonance caused by the non-parabolicity of the conduction band. We observe avoided-level crossings at magnetic fields where Landau levels of the same spin are predicted to intersect. We also study electron spin resonance in the far infrared over a wide range of magnetic field. In samples with symmetrically designed quantum wells we find cyclotron masses and observed g-factors in good agreement with a Pidgeon–Brown analysis adapted to the two-dimensional band structure. However, the spin splitting approaches ∼3 meV as the magnetic field approaches zero in samples intentionally asymmetrically doped.
ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2003.08.042