Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications

• Published in: Physica. E, Low-dimensional systems & nanostructures Low-dimensional systems & nanostructures, 2016-09, Vol.83, p.95-100
• Main Authors: Charles Pravin, J., Nirmal, D., Prajoon, P., Ajayan, J.
• Format: Article
• Language: English
• Subjects: Dual metal gate engineering; High-k gate dielectric; Implementation of inverter circuits using the device for different gate dielectrics and delay decreases for high-k dielectrics than SiO2; Junctionless nanowire MOSFET
• ISSN: 1386-9477; 1873-1759
• DOI: 10.1016/j.physe.2016.04.017

This work covers the impact of dual metal gate engineered Junctionless MOSFET with various high-k dielectric in Nanoscale circuits for low power applications. Due to gate engineering in junctionless MOSFET, graded potential is obtained and results in higher electron velocity of about 31% for HfO2 than SiO2 in the channel region, which in turn improves the carrier transport efficiency. The simulation is done using sentaurus TCAD, ON current, OFF current, ION/IOFF ratio, DIBL, gain, transconductance and transconductance generation factor parameters are analysed. When using HfO2, DIBL shows a reduction of 61.5% over SiO2. The transconductance and transconductance generation factor shows an improvement of 44% and 35% respectively. The gain and output resistance also shows considerable improvement with high-k dielectrics. Using this device, inverter circuit is implemented with different high-k dielectric material and delay have been decreased by 4% with HfO2 when compared to SiO2. In addition, a significant reduction in power dissipation of the inverter circuit is obtained with high-k dielectric Dual Metal Surround Gate Junctionless Transistor than SiO2 based device. From the analysis, it is found that HfO2 will be a better alternative for the future nanoscale device. •Dual metal gate engineered Junctionless MOSFET with various high-k dielectric is implemented.•Analysis of different parameters in DMSGJLT with various high-k gate dielectrics is made.•Implementation of Nanoscale inverter circuit using DMSGJLT with various high-k gate dielectrics and improvement in delay is observed.•This device is applicable for low power applications.