Surface transfer doping of diamond: A review

Ultra-wide bandgap materials show great promise as a solution to some of the limitations of current state of the art semiconductor technology. Among these, diamond has exhibited great potential for use in high-power, high-temperature electronics, as well as sensing and quantum applications. Yet, sig...

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Bibliographic Details
Published in:Progress in surface science 2021-02, Vol.96 (1), p.100613, Article 100613
Main Authors: Crawford, Kevin G., Maini, Isha, Macdonald, David A., Moran, David A.J.
Format: Article
Language:English
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Summary:Ultra-wide bandgap materials show great promise as a solution to some of the limitations of current state of the art semiconductor technology. Among these, diamond has exhibited great potential for use in high-power, high-temperature electronics, as well as sensing and quantum applications. Yet, significant challenges associated with impurity doping of the constrained diamond lattice remain a primary impediment towards the development of diamond-based electronic devices. An alternative approach, used with continued success to unlock the use of diamond for semiconductor applications, has been that of ‘surface transfer doping’ - a process by which intrinsically insulating diamond surfaces can be made semiconducting without the need for traditional impurity doping. Here, we present a review of progress in surface transfer doping of diamond, both a history and current outlook of this highly exploitable attribute.
ISSN:0079-6816
1878-4240
DOI:10.1016/j.progsurf.2021.100613