The hydrostatic pressure effects on intersubband optical absorption of n -type δ-doped quantum well in GaAs

• Published in: Solid state sciences 2012-04, Vol.14 (4), p.440-444
• Main Authors: Oubram, O., Navarro, O., Gaggero-Sager, L.M., Martínez-Orozco, J.C., Rodríguez-Vargas, I.
• Format: Article
• Language: English
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Exact sciences and technology; Hydrostatic pressure; Intersubband optical absorption; n -Type δ-doped quantum well; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures; Physics; Quantum wells
• ISSN: 1293-2558; 1873-3085
• DOI: 10.1016/j.solidstatesciences.2012.01.020

We have theoretically calculated the effects of hydrostatic pressure on subband structure and optical transitions in n -delta-doped quantum well (DDQW) in GaAs for different values of energy. The electronic structure of DDQW under the hydrostatic pressure is determined by solving the Schrödinger equation and a simple algebraic method. From our calculations, it is found that the subband energies and intersubband optical absorption is quite sensitive to the applied hydrostatic pressure. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons. The absorption peaks change in magnitude and the absorption spectrum shifts to the blue as the hydrostatic pressure increases. [Display omitted] ► An algebraic formalism is used to determine the electronic structure under pressure ► The absorption peaks increase in magnitude as the hydrostatic pressure increases ► The absorption spectrum shifts to the blue as the hydrostatic pressure increases ► The forbidden transitions without hydrostatic pressure keep impossible when P≠ 0kbar ► The relative square dipole matrix element decreases with hydrostatic pressure.