Spin transport properties of magnetic tunnel junction based on zinc blende CrS

• Published in: Superlattices and microstructures 2019-09, Vol.133, p.106199, Article 106199
• Main Authors: Qiu, Minzheng, Ye, Shizuo, Wang, Wei, He, Jin, Chang, Sheng, Wang, Hao, Huang, Qijun
• Format: Article
• Language: English
• Subjects: Density functional theory; Spin transport; Spintronic; Zinc-blende CrS
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2019.106199

In this work, the spin transport characteristics of (001) zinc blende CrS/ZnSe/CrS magnetic tunnel junctions are studied with numerical simulations. The computations are performed with the density functional theory and nonequilibrium Green's function. Considering the electronegativity of different atoms, the MTJs with different interface atomic bonds are simulated. High TMR values (up to 2.4 × 1014%) are achieved. The results are illustrated with the transmission spectrum, device density of states, and the band structure. Moreover, the tunnel magnetic resistance ratio decreases with the increasing thickness of the ZnSe barrier. This work provides some physical insight and a preliminary performance assessment for the ZB CrS/ZnSe/CrS MTJ, which is promising for probable spintronic applications. •The spin transport properties of zinc-blende CrS/ZnSe/CrS MTJ are investigated with DFT and NEGF simulations.•The studied MTJ demonstrates a high tunnel magnetic resistance ratio (up to 2.4 × 1014%).•The high tunnel magnetic resistance ratio is illustrated with the transmission spectrum, device density of states, and the band structure.•The tunnel magnetic resistance ratio decreases with increasing thickness of the ZnSe barrier.