Impact of high-κ dielectric and metal nanoparticles in simultaneous enhancement of programming speed and retention time of nano-flash memory

• Published in: Solid-state electronics 2008-10, Vol.52 (10), p.1536-1541
• Main Authors: Pavel, Akeed A., Khan, Mehjabeen A., Kirawanich, Phumin, Islam, N.E.
• Format: Article
• Language: English
• Subjects: Flash memory; High-κ dielectric; Metal nanocrystal; Tunneling
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/j.sse.2008.06.028

A methodology to simulate memory structures with metal nanocrystal islands embedded as floating gate in a high-κ dielectric material for simultaneous enhancement of programming speed and retention time is presented. The computational concept is based on a model for charge transport in nano-scaled structures presented earlier, where quantum mechanical tunneling is defined through the wave impedance that is analogous to the transmission line theory. The effects of substrate-tunnel dielectric conduction band offset and metal work function on the tunneling current that determines the programming speed and retention time is demonstrated. Simulation results confirm that a high-κ dielectric material can increase programming current due to its lower conduction band offset with the substrate and also can be effectively integrated with suitable embedded metal nanocrystals having high work function for efficient data retention. A nano-memory cell designed with silver (Ag) nanocrystals embedded in Al 2O 3 has been compared with similar structure consisting of Si nanocrystals in SiO 2 to validate the concept.